FQB3N60CTM MOSFET Transistor

The FQB3N60CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB3N60CTM transistor as follows.

FQB3N60CTM Transistor Specification

Transistor Code		FQB3N60CTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.4Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		10.5nC

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