FDMC6675BZ MOSFET Transistor

The FDMC6675BZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC6675BZ transistor as follows.

FDMC6675BZ Transistor Specification

Transistor Code		FDMC6675BZ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0144Ohm
Power Dissipation (Maximum)	PD	36W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		46nC

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