FDMC86260ET150 MOSFET Transistor

The FDMC86260ET150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86260ET150 transistor as follows.

FDMC86260ET150 Transistor Specification

Transistor Code		FDMC86260ET150
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		2nS
Gate-Threshold Voltage (Maximum)		4V

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