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FDMC4435BZ MOSFET Transistor

The FDMC4435BZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC4435BZ transistor as follows.

Circuit diagram symbol of the FDMC4435BZ transistor

FDMC4435BZ Transistor Specification

Transistor Code FDMC4435BZ
Transistor Type MOSFET
Control Channel Type P-Channel
Package POWER33
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 31W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 33nC

FDMC4435BZ MOSFET Transistor Overview

The FDMC4435BZ is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a POWER33 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the FDMC4435BZ MOSFET

Followings are the key electrical characteristics of the FDMC4435BZ MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FDMC4435BZ MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FDMC4435BZ MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FDMC4435BZ MOSFET transistor is 18A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FDMC4435BZ MOSFET transistor when the transistor is fully turned on is 0.02 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FDMC4435BZ MOSFET transistor can comfortably transfer into heat without breaking is 31W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FDMC4435BZ MOSFET transistor is switched on is . This is the rate at which FDMC4435BZ MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDMC4435BZ MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FDMC4435BZ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDMC4435BZ MOSFET transistor. You can download the official FDMC4435BZ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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