FDMC86160ET100 MOSFET Transistor

The FDMC86160ET100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC86160ET100 transistor as follows.

FDMC86160ET100 Transistor Specification

Transistor Code		FDMC86160ET100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWER33
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	43A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.014Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		241pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3.6nS
Gate-Threshold Voltage (Maximum)		4V

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