DMN2100UDM MOSFET Transistor

The DMN2100UDM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the DMN2100UDM transistor as follows.

DMN2100UDM Transistor Specification

Transistor Code		DMN2100UDM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		555pF

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