STS6601 MOSFET Transistor

The STS6601 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS6601 transistor as follows.

STS6601 Transistor Specification

Transistor Code		STS6601
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT26
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		69pF
Total Gate Charge		42nC

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