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STGW15H120F2 IGBT Transistor

The STGW15H120F2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW15H120F2 transistor as follows.

Circuit diagram symbol of the STGW15H120F2 transistor

STGW15H120F2 Transistor Specification

Transistor Code STGW15H120F2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 105
Rise Time 7.4

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