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G12N50E1D IGBT Transistor

The G12N50E1D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G12N50E1D transistor as follows.

Circuit diagram symbol of the G12N50E1D transistor

G12N50E1D Transistor Specification

Transistor Code G12N50E1D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO218
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 500V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 4.5V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 50

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