G12N50E1D IGBT Transistor

The G12N50E1D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G12N50E1D transistor as follows.

G12N50E1D Transistor Specification

Transistor Code		G12N50E1D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO218
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		50

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