SSM20G45EGJ IGBT Transistor

The SSM20G45EGJ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SSM20G45EGJ transistor as follows.

SSM20G45EGJ Transistor Specification

Transistor Code		SSM20G45EGJ
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO251
Collector Power Dissipation (Maximum)	Pc	20W
Collector-Emitter Voltage (Maximum)	VCE	450V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	130(PULSE)A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		145
Rise Time		72

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