IXER20N120 IGBT Transistor

The IXER20N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXER20N120 transistor as follows.

IXER20N120 Transistor Specification

Transistor Code		IXER20N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	29A
Rise Time		175

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