SGD02N60 IGBT Transistor

The SGD02N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGD02N60 transistor as follows.

SGD02N60 Transistor Specification

Transistor Code		SGD02N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK(TO252)
Collector Power Dissipation (Maximum)	Pc	30W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	6A

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