RJP60V0DPM IGBT Transistor

The RJP60V0DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP60V0DPM transistor as follows.

RJP60V0DPM Transistor Specification

Transistor Code		RJP60V0DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM
Collector Power Dissipation (Maximum)	Pc	40W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		58
Rise Time		40

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