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IGC114T170S8RH IGBT Transistor

The IGC114T170S8RH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC114T170S8RH transistor as follows.

Circuit diagram symbol of the IGC114T170S8RH transistor

IGC114T170S8RH Transistor Specification

Transistor Code IGC114T170S8RH
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package CHIP
Collector-Emitter Voltage (Maximum) VCE 1700V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.15V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC

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