RJP6065DPM IGBT Transistor

The RJP6065DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP6065DPM transistor as follows.

RJP6065DPM Transistor Specification

Transistor Code		RJP6065DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM
Collector-Emitter Voltage (Maximum)	VCE	630V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	40A
Rise Time		450

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