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FF200R12KT4 IGBT Transistor

The FF200R12KT4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF200R12KT4 transistor as follows.

Circuit diagram symbol of the FF200R12KT4 transistor

FF200R12KT4 Transistor Specification

Transistor Code FF200R12KT4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1100W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.75V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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