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RJP4301APP-M0 IGBT Transistor

The RJP4301APP-M0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP4301APP-M0 transistor as follows.

Circuit diagram symbol of the RJP4301APP-M0 transistor

RJP4301APP-M0 Transistor Specification

Transistor Code RJP4301APP-M0
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220FL
Collector Power Dissipation (Maximum) Pc 30W
Collector-Emitter Voltage (Maximum) VCE 430V
Gate-Emitter Voltage (Maximum) VGE 33V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 125
Rise Time 240

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