CT35SM-8 IGBT Transistor

The CT35SM-8 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CT35SM-8 transistor as follows.

CT35SM-8 Transistor Specification

Transistor Code		CT35SM-8
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	40V
Collector-Emitter Saturation Voltage	VCE(on)	7V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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