IXYY8N90C3 IGBT Transistor

The IXYY8N90C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYY8N90C3 transistor as follows.

IXYY8N90C3 Transistor Specification

Transistor Code		IXYY8N90C3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO251
Collector Power Dissipation (Maximum)	Pc	120W
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		24
Rise Time		20

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