RJH30E2DPP IGBT Transistor

The RJH30E2DPP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH30E2DPP transistor as follows.

RJH30E2DPP Transistor Specification

Transistor Code		RJH30E2DPP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO-220FL
Collector Power Dissipation (Maximum)	Pc	25W
Collector-Emitter Voltage (Maximum)	VCE	360V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		60
Rise Time		100

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