RGT40NS65D IGBT Transistor

The RGT40NS65D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RGT40NS65D transistor as follows.

RGT40NS65D Transistor Specification

Transistor Code		RGT40NS65D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	70W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		45
Rise Time		27

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