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NGD15N41A IGBT Transistor

The NGD15N41A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD15N41A transistor as follows.

Circuit diagram symbol of the NGD15N41A transistor

NGD15N41A Transistor Specification

Transistor Code NGD15N41A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO252
Collector Power Dissipation (Maximum) Pc 107W
Collector-Emitter Voltage (Maximum) VCE 440V
Gate-Emitter Voltage (Maximum) VGE 15V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 55
Rise Time 4000

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