HGT1S20N60B3S IGBT Transistor

The HGT1S20N60B3S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGT1S20N60B3S transistor as follows.

HGT1S20N60B3S Transistor Specification

Transistor Code		HGT1S20N60B3S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263AB
Collector Power Dissipation (Maximum)	Pc	165W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		25

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