KGT30N120NDA IGBT Transistor

The KGT30N120NDA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT30N120NDA transistor as follows.

KGT30N120NDA Transistor Specification

Transistor Code		KGT30N120NDA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P(N)E
Collector Power Dissipation (Maximum)	Pc	310W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100pF
Rise Time		50

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