GA200SA60S IGBT Transistor

The GA200SA60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA200SA60S transistor as follows.

GA200SA60S Transistor Specification

Transistor Code		GA200SA60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	630W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.30V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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