MMIX1Y82N120C3H1 IGBT Transistor

The MMIX1Y82N120C3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMIX1Y82N120C3H1 transistor as follows.

MMIX1Y82N120C3H1 Transistor Specification

Transistor Code		MMIX1Y82N120C3H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector Power Dissipation (Maximum)	Pc	320W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	78A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		285
Rise Time		78

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