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FGW40N120H(40G120H) IGBT Transistor

The FGW40N120H(40G120H) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW40N120H(40G120H) transistor as follows.

FGW40N120H(40G120H) Transistor Specification

Transistor Code		FGW40N120H(40G120H)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	P_c	340W
Collector-Emitter Voltage (Maximum)	V_CE	1200V
Gate-Emitter Voltage (Maximum)	V_GE	20V
Collector-Emitter Saturation Voltage	V_CE(on)	1.8V
Collector Current (Maximum)	I_C	40A
Operating Junction Temperature (Maximum)		175 ^oC
Collector Capacitance		130
Rise Time		60

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