HYG40P120H1S IGBT Transistor

The HYG40P120H1S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HYG40P120H1S transistor as follows.

HYG40P120H1S Transistor Specification

Transistor Code		HYG40P120H1S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	240W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		80

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