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MMG400HB060B6EN IGBT Transistor

The MMG400HB060B6EN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG400HB060B6EN transistor as follows.

Circuit diagram symbol of the MMG400HB060B6EN transistor

MMG400HB060B6EN Transistor Specification

Transistor Code MMG400HB060B6EN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1070W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.45V
Collector Current (Maximum) IC 400A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 60

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