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NGTB50N60S1WG IGBT Transistor

The NGTB50N60S1WG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB50N60S1WG transistor as follows.

Circuit diagram symbol of the NGTB50N60S1WG transistor

NGTB50N60S1WG Transistor Specification

Transistor Code NGTB50N60S1WG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 417W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 252
Rise Time 47

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