F4-75R06W1E3 IGBT Transistor

The F4-75R06W1E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the F4-75R06W1E3 transistor as follows.

F4-75R06W1E3 Transistor Specification

Transistor Code		F4-75R06W1E3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	275W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.45V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		17

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