MIXA10WB1200TED IGBT Transistor

The MIXA10WB1200TED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIXA10WB1200TED transistor as follows.

MIXA10WB1200TED Transistor Specification

Transistor Code		MIXA10WB1200TED
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		E2PACK
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	12A

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