MGP11N60ED IGBT Transistor

The MGP11N60ED is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MGP11N60ED transistor as follows.

MGP11N60ED Transistor Specification

Transistor Code		MGP11N60ED
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	96W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	11A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		10000

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