IXXX160N65B4 IGBT Transistor

The IXXX160N65B4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXX160N65B4 transistor as follows.

IXXX160N65B4 Transistor Specification

Transistor Code		IXXX160N65B4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector Power Dissipation (Maximum)	Pc	940W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	310A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		500
Rise Time		64

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