KGT15N120NDH IGBT Transistor

The KGT15N120NDH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT15N120NDH transistor as follows.

KGT15N120NDH Transistor Specification

Transistor Code		KGT15N120NDH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P(N)E
Collector Power Dissipation (Maximum)	Pc	190W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		60pF
Rise Time		30

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