70MT060WSP IGBT Transistor

The 70MT060WSP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the 70MT060WSP transistor as follows.

70MT060WSP Transistor Specification

Transistor Code		70MT060WSP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MTP
Collector Power Dissipation (Maximum)	Pc	378W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.93V
Collector Current (Maximum)	IC	66A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		530
Rise Time		35

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