APT11GF120BRDQ1G IGBT Transistor

The APT11GF120BRDQ1G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT11GF120BRDQ1G transistor as follows.

APT11GF120BRDQ1G Transistor Specification

Transistor Code		APT11GF120BRDQ1G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	156W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.1V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90
Rise Time		5

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