IXYT30N450HV IGBT Transistor

The IXYT30N450HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXYT30N450HV transistor as follows.

IXYT30N450HV Transistor Specification

Transistor Code		IXYT30N450HV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268HV
Collector Power Dissipation (Maximum)	Pc	430W
Collector-Emitter Voltage (Maximum)	VCE	4500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.9V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		83
Rise Time		318

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