NGTB45N60S IGBT Transistor

The NGTB45N60S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB45N60S transistor as follows.

NGTB45N60S Transistor Specification

Transistor Code		NGTB45N60S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		120
Rise Time		34

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