IRG4BC20SD IGBT Transistor

The IRG4BC20SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4BC20SD transistor as follows.

IRG4BC20SD Transistor Specification

Transistor Code		IRG4BC20SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.4V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		550pF
Rise Time		62

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