IXSQ10N60B2D1 IGBT Transistor

The IXSQ10N60B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSQ10N60B2D1 transistor as follows.

IXSQ10N60B2D1 Transistor Specification

Transistor Code		IXSQ10N60B2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	10A
Rise Time		165

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