FD900R12IP4DV IGBT Transistor

The FD900R12IP4DV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD900R12IP4DV transistor as follows.

FD900R12IP4DV Transistor Specification

Transistor Code		FD900R12IP4DV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	5100W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	900A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		140

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