IGB30N60H3 IGBT Transistor

The IGB30N60H3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGB30N60H3 transistor as follows.

IGB30N60H3 Transistor Specification

Transistor Code		IGB30N60H3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK(TO263)
Collector Power Dissipation (Maximum)	Pc	187W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	60A

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