HGTP3N60B3D IGBT Transistor

The HGTP3N60B3D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP3N60B3D transistor as follows.

HGTP3N60B3D Transistor Specification

Transistor Code		HGTP3N60B3D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	7A
Operating Junction Temperature (Maximum)		150 oC

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