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IXBT10N170 IGBT Transistor

The IXBT10N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBT10N170 transistor as follows.

Circuit diagram symbol of the IXBT10N170 transistor

IXBT10N170 Transistor Specification

Transistor Code IXBT10N170
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 2.3V
Collector Current (Maximum) IC 16A
Rise Time 1200

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