IXGT35N120B IGBT Transistor

The IXGT35N120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT35N120B transistor as follows.

IXGT35N120B Transistor Specification

Transistor Code		IXGT35N120B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	70A
Rise Time		160

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