HGTG10N120BND IGBT Transistor

The HGTG10N120BND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG10N120BND transistor as follows.

HGTG10N120BND Transistor Specification

Transistor Code		HGTG10N120BND
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC

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