IXGT32N60BD1 IGBT Transistor

The IXGT32N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT32N60BD1 transistor as follows.

IXGT32N60BD1 Transistor Specification

Transistor Code		IXGT32N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		80

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