VS-GT400TH60N IGBT Transistor

The VS-GT400TH60N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the VS-GT400TH60N transistor as follows.

VS-GT400TH60N Transistor Specification

Transistor Code		VS-GT400TH60N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	1600W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	400A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		2120
Rise Time		70

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