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APT50GF60BR IGBT Transistor

The APT50GF60BR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT50GF60BR transistor as follows.

Circuit diagram symbol of the APT50GF60BR transistor

APT50GF60BR Transistor Specification

Transistor Code APT50GF60BR
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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